日時 ： ２００９年１１月６日（金）※16：30～
場所 ： 愛媛大学総合研究棟Ⅰ 4F 共通会議室（理学部構内）
要 旨
Valuation of generated pressure in high pressure apparatus is of essential importance when we apply laboratory data to the study of the Earth’s interior. Variation of electrical resistance change by pressure-induced metalization and phase transition in several semi-conductors are used as pressure fixed points. For example, a group of pressure fixed points are selected at First international pressure calibration workshop held in Misasa in 1997. It was reported in Preliminary international pressure scale (PIPS-97). However, the pressure fixed points in PIPS-97 have been decided by a different pressure standard and high pressure devices (e.g., GaAs, cubic-type multianvil apparatus + Decker's NaCl Scale; GaP and ZnS, diamond anvil cell + Piermarini'sRuby scale). Thus, we examined the pressures for pressure-induced metalization in several semi-conductors using a Kawai-type multianvil apparatus and in situ X-ray diffraction technique. We selected the pressure fixed points between 10 and 25 GPa, which are easily achieved by Kawai-type multianvil apparatus. The details of these results will be described in this seminar.
問い合わせ先：土屋 卓久 TEL （089）927-8198
E-mail takut@sci.ehime-u.ac.jp
